Lateral current transport path, a model for GaN-based light-emitting diodes: Applications to practical device designs
- 12 August 2002
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 81 (7), 1326-1328
- https://doi.org/10.1063/1.1499994
Abstract
An advanced model to explain the current spreading phenomenon of a conventional GaN-based light-emitting diode is presented. For this work, an equivalent circuit, consisting of the two lateral resistance components of the p-transparent electrode and the n-type layer is proposed. Theoretical calculations clearly reveal that the current density crowds near the n or p pads according to the device parameters and has an exponential behavior as a function of the lateral length. Based on these results, appropriate device parameters including the critical transparent-electrode thickness were determined, leading to a perfectly uniform current distribution. It was even possible to demonstrate the ideal device geometry without the need for a transparent electrode such as an interdigitated structure.Keywords
This publication has 5 references indexed in Scilit:
- Current crowding in GaN/InGaN light emitting diodes on insulating substratesJournal of Applied Physics, 2001
- Current crowding and optical saturation effects in GaInN/GaN light-emitting diodes grown on insulating substratesApplied Physics Letters, 2001
- Modeling of a GaN-based light-emitting diode for uniform current spreadingApplied Physics Letters, 2000
- The effect of distributed series resistance on the dark and illuminated current—Voltage characteristics of solar cellsIEEE Transactions on Electron Devices, 1986
- CXIX. A study of transparent, highly conducting gold filmsThe London, Edinburgh, and Dublin Philosophical Magazine and Journal of Science, 1955