Characterization of CVD-TiN Films Prepared with Metalorganic Source
- 1 October 1990
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 29 (10R)
- https://doi.org/10.1143/jjap.29.2103
Abstract
This paper investigates the structural and electrical properties of TiN films prepared by metalorganic chemical vapor deposition (MOCVD) using a mixture of tetradimethylamino-titanium (Ti(N(CH3)2)4) and NH3 gases. The deposited films changed from a metallic gray to a gold color at a substrate temperature of 300∼580°C. The film resistivity decreases with increasing substrate temperature to 8.4×102 µΩ·cm at 580°C. The preferred orientation was (111) at temperatures over 400°C.Keywords
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