Atmospheric-pressure plasma pretreatment for direct bonding of silicon wafers at low temperatures
- 25 December 2008
- journal article
- Published by Elsevier BV in Surface and Coatings Technology
- Vol. 203 (5-7), 826-829
- https://doi.org/10.1016/j.surfcoat.2008.06.054
Abstract
No abstract availableKeywords
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- Formation of Silicon Structures by Plasma-Activated Wafer BondingJournal of the Electrochemical Society, 2000
- Low temperature Si3N4 direct bondingApplied Physics Letters, 1993
- Application of oxygen plasma processing to silicon direct bondingSensors and Actuators A: Physical, 1993
- Void-free silicon-wafer-bond strengthening in the 200–400 °C rangeSensors and Actuators A: Physical, 1993