Thermally grown silicon nitride films for high-performance MNS devices

Abstract

Amorphous and uniform silicon nitridefilms with thicknesses of less than 100 Å have been thermally grown on silicon wafers by employing purified ammonia gas. The films are much denser than conventional CVD Si3N4films. The MNS (metal‐thermal nitride‐silicon) structures have very low N ss in the order of 3×1010 cm−2 eV−1 and an effective electron mobility of larger than 800 cm2/V sec in the fabricated n‐channel MNSFFT.