Increment of the Dielectric Constant of Ta[sub 2]O[sub 5] Thin Films by Retarding Interface Oxide Growth on Si Substrates
- 1 January 2001
- journal article
- Published by The Electrochemical Society in Electrochemical and Solid-State Letters
- Vol. 4 (7), F13-F14
- https://doi.org/10.1149/1.1377835
Abstract
The improved electrical properties of tantalum oxides grown by plasma-enhanced atomic layer deposition (PEALD) are presented. In PEALD, oxygen radicals were served as a reactant of at a deposition temperature of 260°C. The interface oxide layer, which was formed during the initial stage of the PEALD, retards its further growth during the annealing process at 700°C for 2 min in ambient, and is thought to be not pure but The stoichiometry of the as-deposited film is oxygen-rich, having no hydrocarbon impurity. As a result, on the films with a thickness of the leakage current density, dominated by Schottky emission, reduces to at 1 MV/cm, and the dielectric constant is obtained as high as even after the annealing process. © 2001 The Electrochemical Society. All rights reserved.Keywords
This publication has 9 references indexed in Scilit:
- Effect of oxidation method and post-oxidation annealing on interface properties of metal–oxide–semiconductor structures formed on n-type 4H-SiC C(0001̄) faceApplied Physics Letters, 2000
- Influence of postdeposition annealing on the enhanced structural and electrical properties of amorphous and crystalline Ta2O5 thin films for dynamic random access memory applicationsJournal of Applied Physics, 1999
- Comparison between the properties of amorphous and crystalline Ta2O5 thin films deposited on SiMicroelectronics Reliability, 1999
- Leakage Current Mechanism of Metal ‐ Ta2 O 5 ‐ Metal Capacitors for Memory Device ApplicationsJournal of the Electrochemical Society, 1999
- Nitrogen plasma annealing for low temperature Ta2O5 filmsApplied Physics Letters, 1998
- Leakage currents in amorphous Ta2O5 thin filmsJournal of Applied Physics, 1997
- Nondestructive measurement of interfacial SiO2 films formed during deposition and annealing of Ta2O5Applied Physics Letters, 1996
- Effects of annealing in O2 and N2 on the electrical properties of tantalum oxide thin films prepared by electron cyclotron resonance plasma enhanced chemical vapor depositionJournal of Electronic Materials, 1995
- Properties of tantalum oxide thin films grown by atomic layer depositionThin Solid Films, 1995