Crystal structure and thermal oxidation of laser-recrystallized polycrystalline silicon

Abstract

Laser‐recrystallized polycrystalline silicon exhibits a weak 〈111〉 preferred orientation, in contrast to the strong 〈110〉 texture seen in fine‐grain poly‐silicon. The oxide thickness thermally grown on laser‐recrystallized poly‐silicon is much greater than that on fine–grain poly‐silicon when both are heavily phosphorus doped but is approximately the same when both films are lightly doped.