In0.53Ga0.47As PIN photodiode grown by MOVPE on a semi-insulating InP substrate for monolithic integration

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Abstract
A substrate-entry PIN photodiode has been constructed using In0.53Ga0.47As grown on a semi-insulating InP substrate by MOVPE. This device shows low dark current (200 pA) and low capacitance (95 fF), with large remote bondpads. This device is suitable for monolithic integration with electronic devices.