Extrinsic heat capacity in the metallic regime of heavily doped silicon and germanium

Abstract

The extrinsic heat capacity of $n$-type germanium and silicon, with concentrations of donors above the critical concentration for metalization, is studied theoretically. A perturbative model, which is similar to models for the cohesive properties of normal simple metals, is found to predict an enhanced extrinsic heat capacity in qualitative agreement with recent experiments.