50−nm silicon structures fabricated with trilevel electron beam resist and reactive-ion etching
- 1 August 1981
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 39 (3), 268-270
- https://doi.org/10.1063/1.92668
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- Resolution Limits of PMMA Resist for Exposure with 50 kV ElectronsJournal of the Electrochemical Society, 1981
- Ultrasmall superconducting tunnel junctionsIEEE Transactions on Electron Devices, 1980
- 400-Å linewidth e-beam lithography on thick silicon substratesApplied Physics Letters, 1980
- Hybrid e-beam/deep UV exposure using portable conformable masking (PCM) techniqueJournal of Vacuum Science and Technology, 1979
- High resolution, steep profile resist patternsJournal of Vacuum Science and Technology, 1979
- New hybrid (e-beam/x-ray) exposure technique for high aspect ratio microstructure fabricationJournal of Vacuum Science and Technology, 1979
- Copolymers of Methyl Methacrylate and Methacrylic Acid and Their Metal Salts as Radiation Sensitive ResistsJournal of the Electrochemical Society, 1979
- 250-Å linewidths with PMMA electron resistApplied Physics Letters, 1978
- Offset masks for lift-off photoprocessingApplied Physics Letters, 1977
- A Novel Method for Fabrication of Ultrafine Metal Lines by Electron BeamsJournal of the Electrochemical Society, 1972