Pressure-induced elimination of the hole gas in semimetallic GaSb-InAs-GaSb heterostructures
- 15 February 1987
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 35 (6), 3039-3042
- https://doi.org/10.1103/physrevb.35.3039
Abstract
We report low-temperature magnetotransport measurements under hydrostatic pressure (up to 1.2 GPa) on a GaSb-InAs-GaSb double heterostructure. At ambient pressure the sample shows mixed conduction by electrons and holes. Pressure induces a decrease in the carrier concentrations which leads to a semimetal-semiconductor transition. In the semiconductor regime, (B) and (B) curves show the normal behavior expected for one-carrier two-dimensional conduction, while in the semimetallic case this behavior is altered by the partial compensation of the system.
Keywords
This publication has 4 references indexed in Scilit:
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