Photoluminescence in Mn-implanted GaAs—An explanation on the ∼1.40-eV emission
- 1 February 1979
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 50 (2), 1097-1103
- https://doi.org/10.1063/1.326087
Abstract
The emission properties of Mn‐implanted layers in GaAs are investigated with respect to changes in excitation intensity, temperature, substrate, and encapsulation. The substrates used were n‐type conducting and Cr‐doped semi‐insulating crystals. The depth‐dependent measurements of the Mn emission show an increase of the diffusion coefficient with dose for Si3N4 encapsulated samples, whereas a suppression of Mn diffusion is observed for SiO2 encapsulated samples. A large energy shift from ∼1.36 to 1.41 eV is observed for Mn emission at 4.2 °K at various excitation intensities. The energy shift increases with the concentration of compensating donors in the n‐type substrate material. The excitation‐dependent emissions are due to the donor‐acceptor pair type transitions in the normal and the random‐impurity‐potential‐disturbed energy states of the bands. Another emission becomes dominant at T≳∼30 °K following the quenching of the donor‐acceptor pair type transitions with an increase of the temperature. An activation energy 95±15 meV is obtained from the temperature quenching of the emission intensity and the energy shift is observed to follow the band‐gap variation. The possible radiative mechanisms are discussed.Keywords
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