Stable transistors in hydrogenated amorphous silicon
- 12 July 2004
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 85 (2), 326-328
- https://doi.org/10.1063/1.1772518
Abstract
Thin-film field-effect transistors in hydrogenated amorphous silicon are notoriously unstable due to the formation of silicon dangling bond trapping states in the accumulated channel region during operation. Here, we show that by using a source-gated transistor a major improvement in stability is obtained. This occurs because the electron quasi-Fermi level is pinned near the center of the band in the active source region of the device and strong accumulation of electrons is prevented. The use of source-gated transistors should enable stable analog circuits to be made in amorphous silicon.Keywords
This publication has 7 references indexed in Scilit:
- Source-gated transistors in hydrogenated amorphous siliconSolid-State Electronics, 2004
- Source-gated thin-film transistorsIEEE Electron Device Letters, 2003
- Kinetics of defect creation in amorphous silicon thin film transistorsJournal of Applied Physics, 2003
- Compensated back-channel TFTs in hydrogenated amorphous siliconIEEE Electron Device Letters, 2003
- Microscopic mechanisms for creation and removal of metastable dangling bonds in hydrogenated amorphous siliconPhysical Review B, 2002
- Hydrogenated Amorphous SiliconPublished by Cambridge University Press (CUP) ,1991
- Resolution of amorphous silicon thin-film transistor instability mechanisms using ambipolar transistorsApplied Physics Letters, 1987