Shallow States in Semiconductors by Impurity Model Potential Method
- 1 January 1969
- journal article
- research article
- Published by Wiley in Physica Status Solidi (b)
- Vol. 36 (1), 181-186
- https://doi.org/10.1002/pssb.19690360119
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
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- The theory of the impurity model potential in semiconductorsPhysics Letters A, 1969
- Two-Electron Correlation in Impurity Centres in Model Potential ApproximationPhysica Status Solidi (b), 1968
- On the Reaction F19(p, α)O16 in the Range of Bombarding Energy from 2.2- to 3.4-MeVJournal of the Physics Society Japan, 1966
- The screened model potential for 25 elementsPhilosophical Magazine, 1965
- The model potential for positive ionsPhilosophical Magazine, 1965
- Screened Impurity Potential in SiJournal of the Physics Society Japan, 1965
- Shallow Impurity States in Silicon and GermaniumPublished by Elsevier ,1957