Effects of nonlinear gain on four-wave mixing and asymmetric gain saturation in a semiconductor laser amplifier
- 29 July 1991
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 59 (5), 499-501
- https://doi.org/10.1063/1.105419
Abstract
Nearly degenerate four‐wave mixing (NDFWM) and asymmetric gain saturation were studied in a 1.5 μm InGaAsPsemiconductor laseramplifier at highly saturated conditions (P out ≫ Psat) and frequency separations up to 500 GHz. Apart from modulation of the carrier density the data reveal a new mechanism of NDFWM with a characteristic time of about 650 fs which takes over when the frequency separation exceeds 100 GHz.Keywords
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