Development of Cat-CVD apparatus — a method to control wafer temperatures under thermal influence of heated catalyzer
- 28 September 2001
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 395 (1), 71-74
- https://doi.org/10.1016/s0040-6090(01)01210-x
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Formation of Silicon-Based Thin Films Prepared by Catalytic Chemical Vapor Deposition (Cat-CVD) MethodJapanese Journal of Applied Physics, 1998
- Deposition of device quality, low H content amorphous siliconJournal of Applied Physics, 1991
- Amorphous silicon produced by a new thermal chemical vapor deposition method using intermediate species SiF2Applied Physics Letters, 1985