Measurements of thin oxide films of SiO2/Si(100)
- 1 March 1994
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 85 (1-4), 42-46
- https://doi.org/10.1016/0168-583x(94)95782-7
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- Growth and Characterization of Room Temperature Anodic SiO2 FilmsJournal of the Electrochemical Society, 1993
- Effects of HF cleaning and subsequent heating on the electrical properties of silicon (100) surfacesApplied Physics Letters, 1992
- Analysis of oxygen by charged particle bombardmentNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1992
- Deuteron beam analysis of rapid thermal nitridation of silicon and thin SiO2 filmsNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1992
- Revisiting the 12C(d, p)13C reaction cross section using condensed gas targetsNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1991
- Simulation and evaluation of nuclear reaction spectraNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1990
- An intercomparison of absolute measurements of the oxygen and tantalum thickness of tantalum pentoxide reference materials, BCR 261, by six laboratoriesNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1988
- An intercomparison of tantalum pentoxide reference studiesNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1988
- Use of the nuclear reaction 16O(d,α)14N in the microanalysis of oxide surface layersNuclear Instruments and Methods, 1973
- A study of thermally oxidized SiO2 surface layers by means of nuclear reactionsJournal of Radioanalytical and Nuclear Chemistry, 1973