Large‐Area Vapor‐Phase Growth and Characterization of MoS2 Atomic Layers on a SiO2 Substrate

Abstract

Atomic-layered MoS₂ is synthesized directly on SiO₂ substrates by a scalable chemical vapor deposition method. The large-scale synthesis of an atomic-layered semiconductor directly on a dielectric layer paves the way for many facile device fabrication possibilities, expanding the important family of useful mono- or few-layer materials that possess exceptional properties, such as graphene and hexagonal boron nitride (h-BN).