X-ray photoelectron spectroscopy study of the chemical structure of thermally nitrided SiO2
- 15 May 1984
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 44 (10), 969-971
- https://doi.org/10.1063/1.94614
Abstract
X‐ray photoelectron spectroscopy has been used to study the composition of 100‐Å thermally grown SiO2 films that have been thermally nitrided in ammonia. The SiOxNy/Si interface was studied both by chemical depth profiling of the oxynitride and by removal of the Si substrate with XeF2. It is found that N is distributed throughout the film, but with the concentration higher at the surface and in a region centered 25 Å from the film/substrate interface. The interface region itself is found to be oxygen‐rich relative to the rest of the film. Possible models which can explain these results are discussed.Keywords
This publication has 17 references indexed in Scilit:
- Low Pressure Nitrided‐Oxide as a Thin Gate Dielectric for MOSFET'sJournal of the Electrochemical Society, 1983
- Compositional Depth Profile of a Native Oxide LPCVD MNOS Structure Using X‐Ray Photoelectron Spectroscopy and Chemical EtchingJournal of the Electrochemical Society, 1983
- Electron inelastic mean free paths in several solids for 200 eV ⩽ E ⩽ 10 keVSurface and Interface Analysis, 1982
- Intensity analysis of XPS spectra to determine oxide uniformity: Application to SiO2/Si interfacesSurface Science, 1980
- Direct Thermal Nitridation of Silicon Dioxide Films in Anhydrous Ammonia GasJournal of the Electrochemical Society, 1980
- The energy dependence of the electron mean free pathSurface and Interface Analysis, 1980
- Electronic structure of Si:-quartz and the influence of local disorderPhysical Review B, 1980
- High-Resolution X-Ray Photoelectron Spectroscopy as a Probe of Local Atomic Structure: Application to Amorphous Siand the Si-SiInterfacePhysical Review Letters, 1979
- Formation of Silicon Nitride at a Si ‐ SiO2 Interface during Local Oxidation of Silicon and during Heat‐Treatment of Oxidized Silicon in NH 3 GasJournal of the Electrochemical Society, 1976
- Hartree-Slater subshell photoionization cross-sections at 1254 and 1487 eVJournal of Electron Spectroscopy and Related Phenomena, 1976