Optical Anisotropy of InAs Monolayer in (311)-Oriented GaAs Matrix
- 1 December 1997
- journal article
- Published by IOP Publishing in Chinese Physics Letters
- Vol. 14 (12), 932-935
- https://doi.org/10.1088/0256-307x/14/12/014
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Two-dimensional excitonic emission in InAs submonolayersPhysical Review B, 1996
- Numerical simulation of ZnSe/GaAs interface reflectance difference spectroscopyJournal of Applied Physics, 1996
- Interface states of ZnSe/GaAs interfaceJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1996
- Energy levels and exciton oscillator strength in submonolayer InAs-GaAs heterostructuresPhysical Review B, 1995
- Optical anisotropy of(11N) and vicinal(001) quantum wellsJournal of Crystal Growth, 1995
- Optical investigation of the electronic structure of single ultrathin InAs layers grown pseudomorphically on (100) and (311)AGaAs substratesPhysical Review B, 1994
- Optical characterization of submonolayer and monolayer InAs structures grown in a GaAs matrix on (100) and high-index surfacesApplied Physics Letters, 1994
- Reflectance-difference spectroscopy of (001) GaAs surfaces in ultrahigh vacuumPhysical Review B, 1992
- Excitons in InAs/GaAs submonolayer quantum wellsPhysical Review B, 1991
- Electro-optic effects in the optical anisotropies of (001) GaAsPhysical Review B, 1989