Extremely Low Resistance Ohmic Contacts to n-GaAs for AlGaAs/GaAs Heterojunction Bipolar Transistors
- 1 August 1984
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 23 (8A), L635-637
- https://doi.org/10.1143/jjap.23.l635
Abstract
New AuGe/Ni/Ti/Au multi-layer structure ohmic contact to n-GaAs is reported which is suitable to fabricate fine emitter and collector patterns of AlGaAs/GaAs heterojunction bipolar transistors. According to an Auger electron spectroscopy investigation, a new alloying mechanism takes place in reducing contact resistivity. A contact resistivity of 3×10-7Ω·cm2 for 3×1018cm-3 doped n-GaAs was achieved through optimum alloying at 370°C.Keywords
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