Microwave nanotube transistor operation at high bias

Abstract

We measure the small signal, $1\mathrm{GHz}$ source-drain dynamical conductance of a back-gated single-walled carbon nanotube field effect transistor at both low and high dc bias voltages. At all bias voltages, the intrinsic device dynamical conductance at $1\mathrm{GHz}$ is identical to the low frequency dynamical conductance, consistent with the prediction of a cutoff frequency much higher than $1\mathrm{GHz}$ . This work represents a significant step towards a full characterization of a nanotube transistor for rf and microwave amplifiers.