Comment on "Ionicity and the theory of Schottky barrier"
- 15 November 1977
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 16 (10), 4695-4697
- https://doi.org/10.1103/physrevb.16.4695
Abstract
The theoretical work of Louie, Chelikowsky, and Cohen on Schottky barriers is compared with other theoretical work based on a different approach. A reason is suggested for the apparently different results, and the covalent-ionic transition is discussed in this context.Keywords
This publication has 8 references indexed in Scilit:
- The metal-semiconductor interface: Si (111) and zincblende (110) junctionsJournal of Physics C: Solid State Physics, 1977
- Ionicity and the theory of Schottky barriersPhysical Review B, 1977
- Schottky barrier heights on p-type diamond and silicon carbide (6h)Physics Letters A, 1976
- Metal-semiconductor junction for (110) surfaces of zinc-blende compoundsPhysical Review B, 1976
- One-electron properties of the metal-semiconductor junction for zincblende compoundsJournal of Physics C: Solid State Physics, 1973
- FUNDAMENTAL TRANSITION IN THE ELECTRONIC NATURE OF SOLIDSPhysical Review Letters, 1969
- Surface States and Barrier Height of Metal-Semiconductor SystemsJournal of Applied Physics, 1965
- Electronegativities of the ElementsThe Journal of Chemical Physics, 1956