23-GHz Band GaAs MESFET Reflection-Type Amplifier
- 1 May 1979
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Microwave Theory and Techniques
- Vol. 27 (5), 408-415
- https://doi.org/10.1109/tmtt.1979.1129641
Abstract
No abstract availableThis publication has 3 references indexed in Scilit:
- 20 GHz Band GaAs-FET Waveguide-Type AmplifierPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2005
- A 12-15 GHz High Gain Amplifier Design Using Submicron Gate GaAs Field Effect TransistorsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2005
- K-band f.e.t. amplifiersElectronics Letters, 1977