Heat Capacities of SubmonolayerHe3andHe4Adsorbed on Ar-Plated Copper

Abstract
Extending the earlier study by Goodstein, McCormick, and Dash, we have measured the heat capacities of He3 and He4 films absorbed in Ar-plated copper, at coverages x ranging from 0.1 to 0.8 monolayer from 0.5 to 4.2 °K. The broad features of the results include the following: C(T) for He4 resembles the temperature dependence of two-dimensional Debye solids, but with characteristic temperatures ΘD which decrease as T falls; ΘD at high coverage agrees with the value 28 °K obtained by Goodstein et al.; ΘD decreases at lower x, but is surprisingly large (16 °K) at x=0.1; He3 heat capacities at high coverage are quite similar to He4 films at the same areal density; at intermediate and lower coverages, C(x,T) of He3 is significantly different from that of He4 and displays a small peak or offset at T2 °K. The data are compared with several microscopic models: localized adsorption, two-dimensional gases, noninteracting particles in a two-dimensional tunneling band, and two-dimensional solids. Each is shown to be inadequate to account for the observed variations with T, x, and isotopic mass. The data are then compared with the behavior of a two-phase film, and this is found to agree with the data on He4 over a substantial range of x, but it fails at low x. We are forced, by general arguments, to invoke surface inhomogeneity to resolve the paradox, and we examine an ad hoc model (due to Peierls) of a substrate consisting of two distinct regions, on which the helium is clustered into dense monolayer patches. The two-patch model is quite successful for He4, yielding two-dimensional characteristic temperatures Θ1=16 °K, Θ2=28 °K for the two species, the ΘD values and the areas belonging to each fraction of the substrate being practically independent of T. Agreement with the two-patch model implies that much of the substrate is substantially bare of adatoms, and hence that adatoms are strongly bound in the dense surface phases. The latent heat for two-dimensional vaporization is estimated to be at least 15°. This value is about 8° greater than the heat of vaporization of bulk liquid He4, implying a large enhancement due to interactions with the substrate. We propose a possible mechanism for the enhancement; namely, a local depression of the...