15 GHz direct modulation bandwidth of vapour-phase regrown 1.3 μm InGaAsP buried-heterostructure lasers under CW operation at room temperature

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Abstract
A modulation bandwidth of 15 GHz is reported for vapour-phase regrown (VPR) 1.3 μm InGaAsP buried heterostructure (BH) lasers. This is the highest bandwidth achieved at room temperature for a III-V semiconductor laser under CW operation. The bandwidth against square root of bias optical power is linear to 15 GHz and no band width saturation effects are observed.