Screened exchange in semiconductors
- 10 May 1973
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 6 (9), L181-L185
- https://doi.org/10.1088/0022-3719/6/9/002
Abstract
The exchange contribution to the band gap is calculated in a simple model to illustrate the various processes and approximations involved. It is shown how the exchange contributes a large and approximately constant fraction of the semiconductor band gap. The changes involved in using a dynamic electron-electron interaction are calculated and found to be significant for this model.Keywords
This publication has 6 references indexed in Scilit:
- Many-body effects at metal-semiconductor junctions. I. Surface plasmons and the electron-electron screened interactionJournal of Physics C: Solid State Physics, 1972
- Comparison of Screened Exchange with the Slater Approximation for SiliconPhysical Review B, 1972
- Need for a Nonlocal Correlation Potential in SiliconPhysical Review B, 1971
- Wave-Number-Dependent Dielectric Function of SemiconductorsPhysical Review B, 1962
- Correlation Energy in a Model SemiconductorPhysical Review B, 1959
- A Simplification of the Hartree-Fock MethodPhysical Review B, 1951