Electron and Hole-Capture Coefficient of Indium in Silicon at Low Temperatures
- 1 January 1968
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 39 (1), 194-200
- https://doi.org/10.1063/1.1655731
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Double-injection experiments in semi-insulating silicon diodesSolid-State Electronics, 1965
- Effects of Diffusion on Double Injection in InsulatorsPhysical Review B, 1965
- Double Injection in Deep-Lying Impurity SemiconductorsJournal of Applied Physics, 1964
- Temperature dependence of hall mobility and μH/μD for SiJournal of Physics and Chemistry of Solids, 1963
- PHOTOCONDUCTIVITY IN INDIUM-DOPED SILICONCanadian Journal of Physics, 1956