In situ transmission electron microscope investigation of the annealing of copper precipitate colonies in silicon
- 1 January 1973
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 44 (1), 486-487
- https://doi.org/10.1063/1.1661910
Abstract
The annealing of copper precipitate colonies in silicon single crystals has been followed in situ in the electron microscope hot stage. The colony dissolution was found to be a two‐stage process; the first stage involved the enveloping dislocations and the precipitates attached to these only. The onset of the second stage was associated with a phase transformation and the generation of dislocations from all of the colony precipitates.Keywords
This publication has 4 references indexed in Scilit:
- Copper Precipitate Colonies in SiliconJournal of Applied Physics, 1972
- Precipitate Colonies in SiliconJournal of Applied Physics, 1972
- Precipitation in High-Purity Silicon Single CrystalsJournal of Applied Physics, 1971
- Triple Acceptors in GermaniumPhysical Review B, 1957