Role of buffer layers for superconducting YBa2Cu3O7−x thin films on GaAs substrates
- 26 August 1991
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 59 (9), 1120-1122
- https://doi.org/10.1063/1.106363
Abstract
High‐temperature superconducting YBa2Cu3O7−x (YBCO) thin films were deposited on GaAs substrates by laser ablation. A double‐buffer layer of yttrium‐stabilized ZrO2 (YSZ)/Si3N4 was used to nucleate YBCO but also to prevent the degradation of the GaAs during YBCO film deposition. Superconducting YBCO thin films with a highly c‐axis orientation perpendicular to the substrate surface, zero‐resistance temperature of 85.5 K, and critical current density of 1.9×103 and 1.3×104 A/cm2 at 77 and 50 K, respectively, have been achieved in our experiments. These values are believed to be the best results reported so far for YBCO on GaAs.Keywords
This publication has 15 references indexed in Scilit:
- Growth of YBa2Cu3O7−x thin films on Si with a CoSi2 buffer layerApplied Physics Letters, 1991
- Pulsed excimer laser deposition Y1Ba2Cu3O7−x superconductor films on silicon with laser-deposited Y-ZrO2 buffer layerApplied Physics Letters, 1990
- In situ single chamber laser processing of YBa2Cu3O7−δ superconducting thin films on Si (100) with yttria-stabilized zirconia buffer layersApplied Physics Letters, 1990
- I n s i t u growth of superconducting YBa2Cu3O7−δ thin films on Si with conducting indium-tin-oxide buffer layersApplied Physics Letters, 1990
- High critical currents in strained epitaxial YBa2Cu3O7−δ on SiApplied Physics Letters, 1990
- Sputter deposition of YBa2Cu3O7−x films on Si at 500 °C with conducting metallic oxide as a buffer layerApplied Physics Letters, 1990
- A review of high-temperature superconducting films on siliconSuperconductor Science and Technology, 1990
- As-deposited Y-Ba-Cu-O superconducting films on silicon at 400 °CApplied Physics Letters, 1989
- Low-temperature deposition of Y-Ba-Cu-O films on a CaF2/GaAs substrateApplied Physics Letters, 1989
- Epitaxial Y-Ba-Cu-O films on Si with intermediate layer by rf magnetron sputteringApplied Physics Letters, 1988