Theories of electronic structure in semiconductor heterostructures
- 31 December 1989
- journal article
- Published by Elsevier in Superlattices and Microstructures
- Vol. 5 (3), 335-340
- https://doi.org/10.1016/0749-6036(89)90311-x
Abstract
No abstract availableKeywords
This publication has 58 references indexed in Scilit:
- Confined carrier quantum states in ultrathin semiconductor heterostructuresPublished by Springer Nature ,2007
- Electronic states in semiconductor heterostructuresIEEE Journal of Quantum Electronics, 1986
- Theory of valence subbands in GaAs heterostructuresSurface Science, 1986
- Self-consistent calculations of electric subbands in p-type GaAlAs-GaAs heterojunctionsSuperlattices and Microstructures, 1985
- Subbands and Landau levels in the two-dimensional hole gas at the GaAs-As interfacePhysical Review B, 1985
- Hole Subband at GaAs/AlGaAs Heterojunctions and Quantum WellsJournal of the Physics Society Japan, 1985
- Electronic structure of two-dimensional semiconductor systemsJournal of Luminescence, 1985
- Effective masses of holes at GaAs-AlGaAs heterojunctionsPhysical Review B, 1985
- Electronic properties of two-dimensional systemsReviews of Modern Physics, 1982
- Superlattice and Negative Differential Conductivity in SemiconductorsIBM Journal of Research and Development, 1970