Type II mid-IR lasers operating above room temperature
- 1 January 1996
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 32 (17), 1593-1595
- https://doi.org/10.1049/el:19961057
Abstract
Laser emission at λ = 3.2 µm has been observed for temperatures up to 350 K in pulsed optical pumping experiments on type-II quantum well lasers with four-constituents in each period (InAs-Ga0.7In0.3Sb-InAs-AlSb). The characteristic temperature is 68 K, and peak output powers of up to 270 mW are obtained for ambient-temperature operation.Keywords
This publication has 7 references indexed in Scilit:
- Type II mid-infrared quantum well lasersApplied Physics Letters, 1996
- Room temperature mid-infrared quantum cascade lasersElectronics Letters, 1996
- Type-II quantum-well lasers for the mid-wavelength infraredApplied Physics Letters, 1995
- Theoretical performance of InAs/ InxGa1−xSb superlattice-based midwave infrared lasersJournal of Applied Physics, 1994
- Auger lifetime enhancement in InAs–Ga1−xInxSb superlatticesApplied Physics Letters, 1994
- Double-heterostructure diode lasers emitting at 3 μm with a metastable GaInAsSb active layer and AlGaAsSb cladding layersApplied Physics Letters, 1994
- Near-room-temperature operation of Pb1−xSrxSe infrared diode lasers using molecular beam epitaxy growth techniquesApplied Physics Letters, 1988