RADIATION EFFECTS IN METAL-INSULATOR-SEMICONDUCTOR CAPACITORS AS DETERMINED FROM CONDUCTANCE MEASUREMENTS
- 15 February 1968
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 12 (4), 153-155
- https://doi.org/10.1063/1.1651933
Abstract
Conductance‐versus‐voltage measurements were employed to determine the distribution of fast interface states in MOS and MNS capacitors and the changes in these distributions due to gamma irradiation with applied bias. MNS samples showed no changes due to irradiation, while MOS samples showed an increase in the conductance peak due to an increase in the density of the fast states.Keywords
This publication has 5 references indexed in Scilit:
- The Si-SiO2Interface - Electrical Properties as Determined by the Metal-Insulator-Silicon Conductance TechniqueBell System Technical Journal, 1967
- Automatic Plotting of Conductance and Capacitance of Metal-Insulator-Semiconductor Diodes or Any Two Terminal Complex AdmittanceReview of Scientific Instruments, 1966
- ELECTRON BOMBARDMENT OF MOS CAPACITORSApplied Physics Letters, 1966
- MOS CONDUCTANCE TECHNIQUE FOR MEASURING SURFACE STATE PARAMETERSApplied Physics Letters, 1965
- THE EFFECT OF LOW-ENERGY ELECTRON IRRADIATION OF METAL-OXIDE-SEMICONDUCTOR STRUCTURESApplied Physics Letters, 1965