Tight-bonding calculation of acceptor energies in germanium and silicon
- 1 April 1957
- journal article
- Published by Elsevier in Journal of Physics and Chemistry of Solids
- Vol. 2 (2), 115-118
- https://doi.org/10.1016/0022-3697(57)90097-5
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
- Theory of Acceptor Levels in GermaniumPhysical Review B, 1955
- Electrical Properties of Silicon Containing Arsenic and BoronPhysical Review B, 1954
- Ionization Energies of Groups III and V Elements in GermaniumPhysical Review B, 1954
- The Dependence of Bond Energy on Bond LengthThe Journal of Physical Chemistry, 1954