Simultaneous measurement of spontaneous emission rate, nonlinear gain coefficient, and carrier lifetime in semiconductor lasers using a parasitic-free optical modulation technique
- 5 February 1990
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 56 (6), 518-520
- https://doi.org/10.1063/1.102754
Abstract
An optical modulation technique is used to determine three important parameters for 1.3 μm InGaAsP diode lasers: the rate of spontaneous emission into the guided modes, the nonlinear gain coefficient, and the carrier lifetime at threshold. These results are unaffected by electrical parasitics, and are essential to understanding the noise and modulation properties of diode lasers.Keywords
This publication has 15 references indexed in Scilit:
- Theory and experiment of the parasitic-free frequency response measurement technique using facet-pumped optical modulation in semiconductor diode lasersApplied Physics Letters, 1989
- Observation of positive and negative nonlinear gain in an optical injection experiment: Proof of the cavity standing-wave-induced nonlinear gain theory in 1.3 μm wavelength semiconductor diode lasersApplied Physics Letters, 1989
- Measurements of the nonlinear damping factor in 1.5 μm distributed feedback lasersApplied Physics Letters, 1989
- Parasitic-free measurement of the fundamental frequency response of a semiconductor laser by active-layer photomixingApplied Physics Letters, 1988
- Measurement of intrinsic frequency response of semiconductor lasers using optical modulationElectronics Letters, 1988
- Nearly degenerate four-wave mixing in a traveling-wave semiconductor laser amplifierApplied Physics Letters, 1987
- Gain nonlinearities in semiconductor lasers: Theory and application to distributed feedback lasersIEEE Journal of Quantum Electronics, 1987
- Universal relationship between resonant frequency and damping rate of 1.3 μm InGaAsP semiconductor lasersApplied Physics Letters, 1987
- High speed semiconductor laser design and performanceSolid-State Electronics, 1987
- Ultra-high-speed modulation of 1.3-µm InGaAsP diode lasersIEEE Journal of Quantum Electronics, 1986