Semiconducting silicide-silicon heterojunction elaboration by solid phase epitaxy

Abstract

Semiconducting βFeSi₂ has been successfully grown on a Si (111) substrate. It has been proven that under ultrahigh vacuum conditions, the solid phase epitaxy temperature can be lowered to ∼800 K, where only the βFeSi₂ phase is stabilized. The disilicide formation was monitored in situ by various surface‐sensitive techniques such as low‐energy electron diffraction, Auger electron spectroscopy, and ultraviolet photoelectron spectroscopy. The epitaxial relationships were ascertained by transmission electron diffraction and microscopy including high‐resolution cross‐sectional image. The results show the epitaxy of βFeSi₂ (110) and (101) planes parallel to the Si (111) plane. The disilicide‐silicon heterojunction displays an atomically abrupt interface.