Highly Spin-Polarized Room-Temperature Tunnel Injector for Semiconductor Spintronics using MgO(100)

Abstract

The spin polarization of current injected into GaAs from a $\mathrm{C}\mathrm{o}\mathrm{F}\mathrm{e}/\mathrm{M}\mathrm{g}\mathrm{O}(100)$ tunnel injector is inferred from the electroluminescence polarization from $\mathrm{G}\mathrm{a}\mathrm{A}\mathrm{s}/\mathrm{A}\mathrm{l}\mathrm{G}\mathrm{a}\mathrm{A}\mathrm{s}$ quantum well detectors. The polarization reaches 57% at 100 K and 47% at 290 K in a 5 T perpendicular magnetic field. Taking into account the field dependence of the luminescence polarization, the spin injection efficiency is at least 52% at 100 K, and 32% at 290 K. We find a nonmonotonic temperature dependence of the polarization which can be attributed to spin relaxation in the quantum well detectors.