Dislocation Etch Pits and Phase Stability on Single Crystal Tungsten Disilicide
- 1 April 1965
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 4 (4)
- https://doi.org/10.1143/jjap.4.269
Abstract
Spiral and hexahedral etch pits brought out dislocation loops on single crystal WSi2 by etching with 8H2O: 4HNO3: 1HF or 3H2O: 1HNO3. The dislocation density was calculated to be 2×108 dislocations/cm2. Annealing at temperatures ranging from 1400° to 1800°C decreased the number of dislocation loops present. Annealing of specimens at 1600°C or above resulted in the formation of the second phase WSi0.7 as verified by x-ray and electron microprobe analyses. At 1800°C the etch pits started to disappear which apparently is associated with the formation of the second phase.Keywords
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