Analysis of reflection high-energy electron-diffraction data from reconstructed semiconductor surfaces

Abstract

Features in reflection high-energy electron-diffraction patterns arising from various types of surface disorder are discussed, with specific examples of each. The relationship between (001)2×4 and $\mathrm{}\left(001\right)\mathrm{}-c(2\mathrm{}\times 8)$ reconstructions, which are frequently observed on III-V compound semiconductor surfaces, is explicitly demonstrated.