Subthreshold slope for insulated gate field-effect transistors

1 November 1975

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices

Vol. 22 (11), 1049-1051
https://doi.org/10.1109/T-ED.1975.18269

Abstract

An explicit expression has been derived for the subthreshold slope of an insulated gate field-effect transistor. This expression is used to explore the influence of surface band-bending, gate insulator thickness, substrate doping, substrate bias, and temperature.

Keywords

SUBSTRATE DOPING
BAND BENDING
SUBSTRATE BIAS
INSULATED GATE
EXPLICIT EXPRESSION
INSULATOR THICKNESS
SURFACE BAND

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