CAD model for threshold and subthreshold conduction in MOSFETs
- 1 June 1982
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Solid-State Circuits
- Vol. 17 (3), 454-458
- https://doi.org/10.1109/jssc.1982.1051759
Abstract
The authors propose a simple model for the operation of MOSFETs in both weak and strong inversion. The proposed model shows better agreement to experimental results than previous models in the subthreshold and threshold regions, and is well suited for use in circuit simulation programs; the authors have implemented it in MSINC and SPICE programs, and simulation results are compared to experimental data for a micropower amplifierKeywords
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