Characterization of current-induced degradation in Be-doped HBTs based in GaAs and InP
- 1 July 1993
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 40 (7), 1194-1201
- https://doi.org/10.1109/16.216421
Abstract
No abstract availableThis publication has 20 references indexed in Scilit:
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