Lateral p-n junctions on GaAs(111)A substrates patterned with equilateral triangles
- 31 December 1992
- journal article
- Published by Elsevier in Surface Science
- Vol. 267 (1-3), 26-28
- https://doi.org/10.1016/0039-6028(92)91080-u
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Si doping and MBE growth of GaAs on tilted (111)A substratesJournal of Crystal Growth, 1991
- Incorporation Behavior of Si Atoms in the Molecular Beam Epitaxial Growth of GaAs on Misoriented (111)A SubstratesJapanese Journal of Applied Physics, 1990
- Ga adatom migration over a nonplanar substrate during molecular beam epitaxial growth of GaAs/AlGaAs heterostructuresApplied Physics Letters, 1989
- Molecular beam epitaxy of GaAs/AlGaAs quantum wells on channeled substratesApplied Physics Letters, 1989