The planar junction etch for high voltage and low surface fields in planar devices

Abstract

A modification of the moat etch type of surface contouring is described which can increase the avalanche breakdown voltage of planar p-n junctions and greatly reduce peak surface electric fields. A properly located moat etch or bevel is used to achieve what is effectively a positive bevel intersection angle between the junction and the surface. Qualitative arguments based on charge balance, exact computer solutions, and experimental results show that higher breakdown voltage and much lower surface fields can be achieved as some, but not all, of the deleterious effects of the junction curvature are eliminated. Optimum design and sensitivity to process variations are also considered.