Generation-recombination noise in the channel of GaAs Schottky-gate field-effect transistors

Abstract

The low-frequency noise in GaAs m.e.s. f.e.t.s was measured continuously for temperatures varying from 80 to 310K. It presented distinct maxima, suggesting the presence of several g.r. processes. The shift of these peaks at different frequencies (500 Hz to 1 MHz) allowed us to obtain the time constants and the activation energies of four trapping levels. The noise reported here could stem from multilevel trapping in the channel.