High-Field Resonant Magnetotransport Measurements in Smalln+nn+GaAs Structures: Evidence for Electric-Field-Induced Elastic Inter-Landau-Level Scattering

Abstract
Magnetophonon resonance at high electric fields in thin (1 to 9 μm) n+ nn+ GaAs structures reveals a new mechanism of magnetoconduction, in which an electron in the nth Landau level can scatter elastically or quasielastically into the (n+1)th level.

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