High-Field Resonant Magnetotransport Measurements in SmallGaAs Structures: Evidence for Electric-Field-Induced Elastic Inter-Landau-Level Scattering
- 6 August 1984
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 53 (6), 608-611
- https://doi.org/10.1103/physrevlett.53.608
Abstract
Magnetophonon resonance at high electric fields in thin (1 to 9 μm) GaAs structures reveals a new mechanism of magnetoconduction, in which an electron in the Landau level can scatter elastically or quasielastically into the level.
Keywords
This publication has 2 references indexed in Scilit:
- The application of the magnetophonon effect to a study of hot electron phenomena in insbJournal of Physics C: Solid State Physics, 1970
- The magnetophonon effect in III-V semiconducting compoundsJournal of Physics C: Solid State Physics, 1968