Dual implantation of Be+ and F+ in GaAs and AlxGa1−xAs
- 12 October 1987
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 51 (15), 1161-1163
- https://doi.org/10.1063/1.98719
Abstract
Dual implantation of Be+/F+ ions in GaAs and Al0.3Ga0.7As is performed and studied by means of Hall‐effect and secondary ion mass spectrometry analyses. This technique leads to significantly less redistribution of Be implants both in GaAs and Al0.3Ga0.7As and considerably high electrical activity in Al0.3Ga0.7As, as compared with implant of Be+ only. This technique may have the great advantage of being used to fabricate a wide variety of AlxGa1−xAs/GaAs devices.Keywords
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