Growth and Optical Properties of GaN Grown by MBE on Novel Lattice-Matched Oxide Substrates
- 1 January 1995
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- The growth and properties of group III nitridesJournal of Crystal Growth, 1995
- Native defects and dopants in gan studied through photoluminescence and optically detected magnetic resonanceJournal of Electronic Materials, 1995
- High dislocation densities in high efficiency GaN-based light-emitting diodesApplied Physics Letters, 1995
- Candela-class high-brightness InGaN/AlGaN double-heterostructure blue-light-emitting diodesApplied Physics Letters, 1994