Multiple SOI Structure Fabricate by High Dose Oxygen Implantation and Epitaxial Growth
- 1 December 1981
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 20 (12), L909
- https://doi.org/10.1143/jjap.20.l909
Abstract
A triple SOI (Silicon crystal On Insulator) structure has been fabricated on (100) and (111) Si substrates, utilizing three SIMOX (Separation by IMplanted OXygen) cycles. The SIMOX process consists of high-dose oxygen implantation followed by annealing and epitaxial growth of silicon, and provides good surface morphology. The top Si layer of the present triple SOI is single crystalline, which is confirmed by reflection electron diffraction and Rutherford backscattering measurement.Keywords
This publication has 3 references indexed in Scilit:
- Single-crystal Si films on SiO2 prepared by using a stationary graphite heater for lateral epitaxy by seeded solidificationApplied Physics Letters, 1981
- Characteristics of MOSFETs fabricated in silicon-on-insulator material formed by high-dose oxygen ion implantationElectronics Letters, 1981
- Substrate-orientation dependence of the epitaxial regrowth rate from Si-implanted amorphous SiJournal of Applied Physics, 1978