Photoinduced grating and intensity dependence of defect generation in Ge-doped silica optical fiber
- 27 July 1992
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 61 (4), 390-392
- https://doi.org/10.1063/1.107892
Abstract
GeE’ centers photoinduced in Ge‐doped silica by 5 eV photons of various intensities and fluences were found by electron spin resonance to be induced and bleached by one‐ and two‐photon absorption processes, respectively. The observation that GeE’‐type centers are the only paramagnetic centers induced by very low intensity 5 eV photons in Ge‐doped silica supports the proposal that GeE’‐type centers are responsible for the photoinduced gratings observed in both Bragg grating and second‐harmonic generation fibers.Keywords
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