Electron mobility in n-type GaAs at 77 K: Determination of the compensation ratio
- 1 January 1982
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 53 (1), 769-770
- https://doi.org/10.1063/1.329986
Abstract
Electron‐mobility values in n‐type GaAs at 77 K were computed utilizing a variational procedure and taking into account all major scattering mechanisms. Mobility values are tabulated as a function of electron concentrations, providing a convenient means for the determination of the compensation ratio, i.e., the determination of the total concentration of ionized impurities.Keywords
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- Electron mobility and free-carrier absorption in GaAs: Determination of the compensation ratioJournal of Applied Physics, 1979
- Electrical characterization of epitaxial layersThin Solid Films, 1976